any changing of specification will not be informed individual MMDT2227 npn-pnp silicon multi-chip transistor r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com ele k troni sche bauelemente * features p o w e r d i s s i p a t i o n p c m : 0 . 2 w ( t a m p . = 2 5 c ) c o l l e c t o r c u r r e n t i c m : 0 . 2 / - 0 . 2 a c o l l e c t o r - b a s e v o l t a g e v ( b r ) c b o : 7 5 / - 6 0 v o p e r a t i n g & s t o r a g e j u n c t i o n t e m p e r a t u r e t j , t s t g : - 5 5 c ~ + 1 5 0 c o o o electrical characteristics( tamb=25 o c unless otherwise specified) c 2 b 1 e 1 e 2 b 2 c 1 npn2222a electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=1 0 a,i e =0 75 v collector-emitter breakdown voltage v (br)ceo ic= 10 ma,i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =1 0 a,i c =0 6 v collector cut-off current i cbo v cb = 60 v,i e =0 10 na emitter cut-off current i ebo v eb =3v,i c =0 10 na dc current gain h fe v ce =10v,i c = 150 ma 100 300 v ce(sat)1 i c =1 50 ma,i b =1 5 ma 0.3 v collector-emitter saturation voltage v ce(sat)2 i c = 500 ma,i b = 50 ma 1 v v be(sat)1 i c =1 50 ma,i b =1 5 ma 1.2 v base -emitter saturation voltage v be(sat)2 i c = 500 ma,i b = 50 ma 2 v transition frequency f t v ce = 20 v,i c = 20 ma,f=100mhz 300 mhz collector output capacitance c ob v cb = 10 v,i e =0,f= 1 mhz 8 pf noise figure nf v ce = 10 v,i c = 0.1 ma, f= 1k hz,rs= 1 k 4 db 01 -jan-2006 rev. b page 1 of 6 s o t - 3 6 3 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026typ (0.65typ) .096(2.45) .085(2.15) .021ref (0.525)ref .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) 8 o o 0
any changing of specification will not be informed individual MMDT2227 npn-pnp silicon multi-chip transistor http://www.secosgmbh.com ele k troni sche bauelemente pnp2907a electrical characteristicstamb=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-1 0 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic=- 10 ma,i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-5 0 v,i e =0 -10 na emitter cut-off current i ebo v eb =-3v,i c =0 -10 na dc current gain h fe v ce =-10v,i c =- 150 ma 100 300 v ce(sat)1 i c =-1 50 ma,i b =-1 5 ma -0.4 v collector-emitter saturation voltage v ce(sat)2 i c =- 500 ma,i b =- 50 ma -1.6 v v be(sat)1 i c =-1 50 ma,i b =-1 5 ma -1.3 v base -emitter saturation voltage v be(sat)2 i c =- 500 ma,i b =- 50 ma -2.6 v transition frequency f t v ce =- 20 v,i c =-50ma,f=100mhz 200 mhz collector output capacitance c ob v cb =- 10 v,i e =0,f= 1 mhz 8 pf figure 1. turnon time figure 2. turnoff time switching time equivalent test circuits scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope. +16 v 2 v < 2 ns 0 1.0 to 100 m s, duty cycle 2.0% 1 k w + 30 v 200 c s * < 10 pf +16 v 14 v 0 < 20 ns 1.0 to 100 m s, duty cycle 2.0% 1 k + 30 v 200 c s * < 10 pf 4 v 1n914 01 -j a n-200 6 rev. b page 2 of 6
any changing of specification will not be informed individual MMDT2227 npn-pnp silicon multi-chip transistor http://www.secosgmbh.com elektronische bauelemente figure 5. turn on time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turnoff time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s 1/8 t f t f 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain v ce , collector emitter voltage (v) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region npn2222 01 -j a n-200 6 rev. b page 3 of 6
any changing of specification will not be informed individual MMDT2227 npn-pnp silicon multi-chip transistor figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf , noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf , noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 w 500 m a, r s = 200 w 100 m a, r s = 2.0 k w 50 m a, r s = 4.0 k w f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances reverse voltage (v) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. currentgain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , currentgain bandwidth products (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c http://www.secosgmbh.com elektronische bauelemente figure 11. aono voltages i c , collect current (ma) 0.4 0.6 0.8 1.0 0.2 v , voltage (v) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 12. temperature coefficients i c , collect current (ma) 0.5 0 +0.5 coefficient (mv/ c) 1.0 1.5 2.5 r vc for v ce(sat) r vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v 2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 npn2222 01 -j a n-200 6 rev. b page 4 of 6
any changing of specification will not be informed individual MMDT2227 npn-pnp silicon multi-chip transistor typical characteristics figure 13. dc current gain i c , c ollector c urrent (ma) 0.3 0.5 0.7 1.0 3.0 0.2 0.1 t j = 125 c 25 c 55 c v ce = 1.0 v v ce = 10 v h f e , n ormalized c urrent g ain 2.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 figure 14. collector saturation region i b , b ase c urrent (ma) 0.4 0.6 0.8 1.0 0.2 v , c ollector e mitter v oltage (v) 0 ce i c = 1.0 ma 0.005 10 ma 0.01 100 ma 500 ma 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 figure 15. turnon time i c , c ollector c urrent 300 5.0 figure 16. turnoff time i c , c ollector c urrent (ma) 5.0 t, t ime (ns) t, t ime (ns) 200 100 70 50 30 20 10 7.0 5.0 3.0 7.0 10 20 30 50 70 100 200 300 500 t r 2.0 v t d @ v be(off) = 0 v v cc = 30 v i c /i b = 10 t j = 25 c 500 300 100 70 50 30 20 10 7.0 5.0 7.0 10 20 30 50 70 100 200 300 500 200 t f t s = t s 1/8 t f v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c http://www.secosgmbh.com elektronische bauelemente pnp2907 01 -j a n-200 6 rev. b page 5 of 6
any changing of specification will not be informed individual MMDT2227 npn-pnp silicon multi-chip transistor typical small signal characteristics noise figure v ce = 10 vdc, t a = 25 c figure 17. frequency effects f, f requency (khz) 10 0.01 figure 18. source resistance effects r s , s ource r esistance (ohms) n f , n oise f igure (db) n f , noise figure (db) f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma r s = optimum source resistance 8.0 6.0 4.0 2.0 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8.0 6.0 4.0 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k i c = 1.0 ma, r s = 430 w 500 m a, r s = 560 w 50 m a, r s = 2.7 k w 100 m a, r s = 1.6 k w figure 19. capacitances r everse v oltage (vo l ts) 30 figure 20. currentgain e bandwidth product i c , c ollector current (ma) c, c apacitance (pf) 0.1 2.0 figure 21. aono voltage i c , c ollector c urrent (ma) 1.0 figure 22. temperature coefficients i c , c ollector c urrent (ma) v , v oltage (v) t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v r v c for v ce( s at) f t , c urrent g ain e b andwidth p roduct (mhz) c oefficient (mv / c) 20 10 7.0 5.0 3.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 400 300 200 100 80 60 40 30 20 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 +0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 c eb c cb v ce = 20 v t j = 25 c r vb for v be http://www.secosgmbh.com elektronische bauelemente p np 2 907 01 -j a n-200 6 rev. b page 6 of 6
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